Based on user/ft/stm32-dev-bridge, without the project-specific build

directories (and duplicated code).

1 files changed, 1316 insertions, 0 deletions

diff --git a/Drivers/STM32F4xx_HAL_Driver/Src/stm32f4xx_hal_flash_ex.c b/Drivers/STM32F4xx_HAL_Driver/Src/stm32f4xx_hal_flash_ex.c
new file mode 100644
index 0000000..0fadd8f
--- /dev/null
+++ b/Drivers/STM32F4xx_HAL_Driver/Src/stm32f4xx_hal_flash_ex.c
@@ -0,0 +1,1316 @@
+/**
+  ******************************************************************************
+  * @file    stm32f4xx_hal_flash_ex.c
+  * @author  MCD Application Team
+  * @version V1.3.2
+  * @date    26-June-2015
+  * @brief   Extended FLASH HAL module driver.
+  *          This file provides firmware functions to manage the following
+  *          functionalities of the FLASH extension peripheral:
+  *           + Extended programming operations functions
+  *
+  @verbatim
+  ==============================================================================
+                   ##### Flash Extension features #####
+  ==============================================================================
+
+  [..] Comparing to other previous devices, the FLASH interface for STM32F427xx/437xx and
+       STM32F429xx/439xx devices contains the following additional features
+
+       (+) Capacity up to 2 Mbyte with dual bank architecture supporting read-while-write
+           capability (RWW)
+       (+) Dual bank memory organization
+       (+) PCROP protection for all banks
+
+                      ##### How to use this driver #####
+  ==============================================================================
+  [..] This driver provides functions to configure and program the FLASH memory
+       of all STM32F427xx/437xx andSTM32F429xx/439xx devices. It includes
+      (#) FLASH Memory Erase functions:
+           (++) Lock and Unlock the FLASH interface using HAL_FLASH_Unlock() and
+                HAL_FLASH_Lock() functions
+           (++) Erase function: Erase sector, erase all sectors
+           (++) There are two modes of erase :
+             (+++) Polling Mode using HAL_FLASHEx_Erase()
+             (+++) Interrupt Mode using HAL_FLASHEx_Erase_IT()
+
+      (#) Option Bytes Programming functions: Use HAL_FLASHEx_OBProgram() to :
+           (++) Set/Reset the write protection
+           (++) Set the Read protection Level
+           (++) Set the BOR level
+           (++) Program the user Option Bytes
+      (#) Advanced Option Bytes Programming functions: Use HAL_FLASHEx_AdvOBProgram() to :
+       (++) Extended space (bank 2) erase function
+       (++) Full FLASH space (2 Mo) erase (bank 1 and bank 2)
+       (++) Dual Boot activation
+       (++) Write protection configuration for bank 2
+       (++) PCROP protection configuration and control for both banks
+
+  @endverbatim
+  ******************************************************************************
+  * @attention
+  *
+  * <h2><center>&copy; COPYRIGHT(c) 2015 STMicroelectronics</center></h2>
+  *
+  * Redistribution and use in source and binary forms, with or without modification,
+  * are permitted provided that the following conditions are met:
+  *   1. Redistributions of source code must retain the above copyright notice,
+  *      this list of conditions and the following disclaimer.
+  *   2. Redistributions in binary form must reproduce the above copyright notice,
+  *      this list of conditions and the following disclaimer in the documentation
+  *      and/or other materials provided with the distribution.
+  *   3. Neither the name of STMicroelectronics nor the names of its contributors
+  *      may be used to endorse or promote products derived from this software
+  *      without specific prior written permission.
+  *
+  * THIS SOFTWARE IS PROVIDED BY THE COPYRIGHT HOLDERS AND CONTRIBUTORS "AS IS"
+  * AND ANY EXPRESS OR IMPLIED WARRANTIES, INCLUDING, BUT NOT LIMITED TO, THE
+  * IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE ARE
+  * DISCLAIMED. IN NO EVENT SHALL THE COPYRIGHT HOLDER OR CONTRIBUTORS BE LIABLE
+  * FOR ANY DIRECT, INDIRECT, INCIDENTAL, SPECIAL, EXEMPLARY, OR CONSEQUENTIAL
+  * DAMAGES (INCLUDING, BUT NOT LIMITED TO, PROCUREMENT OF SUBSTITUTE GOODS OR
+  * SERVICES; LOSS OF USE, DATA, OR PROFITS; OR BUSINESS INTERRUPTION) HOWEVER
+  * CAUSED AND ON ANY THEORY OF LIABILITY, WHETHER IN CONTRACT, STRICT LIABILITY,
+  * OR TORT (INCLUDING NEGLIGENCE OR OTHERWISE) ARISING IN ANY WAY OUT OF THE USE
+  * OF THIS SOFTWARE, EVEN IF ADVISED OF THE POSSIBILITY OF SUCH DAMAGE.
+  *
+  ******************************************************************************
+  */
+
+/* Includes ------------------------------------------------------------------*/
+#include "stm32f4xx_hal.h"
+
+/** @addtogroup STM32F4xx_HAL_Driver
+  * @{
+  */
+
+/** @defgroup FLASHEx FLASHEx
+  * @brief FLASH HAL Extension module driver
+  * @{
+  */
+
+#ifdef HAL_FLASH_MODULE_ENABLED
+
+/* Private typedef -----------------------------------------------------------*/
+/* Private define ------------------------------------------------------------*/
+/** @addtogroup FLASHEx_Private_Constants
+  * @{
+  */
+#define SECTOR_MASK               ((uint32_t)0xFFFFFF07)
+#define FLASH_TIMEOUT_VALUE       ((uint32_t)50000)/* 50 s */
+/**
+  * @}
+  */
+
+/* Private macro -------------------------------------------------------------*/
+/* Private variables ---------------------------------------------------------*/
+/** @addtogroup FLASHEx_Private_Variables
+  * @{
+  */
+extern FLASH_ProcessTypeDef pFlash;
+/**
+  * @}
+  */
+
+/* Private function prototypes -----------------------------------------------*/
+/** @addtogroup FLASHEx_Private_Functions
+  * @{
+  */
+/* Option bytes control */
+static void               FLASH_MassErase(uint8_t VoltageRange, uint32_t Banks);
+static HAL_StatusTypeDef  FLASH_OB_EnableWRP(uint32_t WRPSector, uint32_t Banks);
+static HAL_StatusTypeDef  FLASH_OB_DisableWRP(uint32_t WRPSector, uint32_t Banks);
+static HAL_StatusTypeDef  FLASH_OB_RDP_LevelConfig(uint8_t Level);
+static HAL_StatusTypeDef  FLASH_OB_UserConfig(uint8_t Iwdg, uint8_t Stop, uint8_t Stdby);
+static HAL_StatusTypeDef  FLASH_OB_BOR_LevelConfig(uint8_t Level);
+static uint8_t            FLASH_OB_GetUser(void);
+static uint16_t           FLASH_OB_GetWRP(void);
+static uint8_t            FLASH_OB_GetRDP(void);
+static uint8_t            FLASH_OB_GetBOR(void);
+
+#if defined(STM32F401xC) || defined(STM32F401xE) || defined(STM32F411xE) || defined(STM32F446xx)
+static HAL_StatusTypeDef  FLASH_OB_EnablePCROP(uint32_t Sector);
+static HAL_StatusTypeDef  FLASH_OB_DisablePCROP(uint32_t Sector);
+#endif /* STM32F401xC || STM32F401xE || STM32F411xE || STM32F446xx */
+
+#if defined(STM32F427xx) || defined(STM32F437xx) || defined(STM32F429xx)|| defined(STM32F439xx)
+static HAL_StatusTypeDef FLASH_OB_EnablePCROP(uint32_t SectorBank1, uint32_t SectorBank2, uint32_t Banks);
+static HAL_StatusTypeDef FLASH_OB_DisablePCROP(uint32_t SectorBank1, uint32_t SectorBank2, uint32_t Banks);
+static HAL_StatusTypeDef  FLASH_OB_BootConfig(uint8_t BootConfig);
+#endif /* STM32F427xx || STM32F437xx || STM32F429xx|| STM32F439xx */
+
+extern HAL_StatusTypeDef         FLASH_WaitForLastOperation(uint32_t Timeout);
+/**
+  * @}
+  */
+
+/* Exported functions --------------------------------------------------------*/
+/** @defgroup FLASHEx_Exported_Functions FLASHEx Exported Functions
+  * @{
+  */
+
+/** @defgroup FLASHEx_Exported_Functions_Group1 Extended IO operation functions
+ *  @brief   Extended IO operation functions
+ *
+@verbatim
+ ===============================================================================
+                ##### Extended programming operation functions #####
+ ===============================================================================
+    [..]
+    This subsection provides a set of functions allowing to manage the Extension FLASH
+    programming operations Operations.
+
+@endverbatim
+  * @{
+  */
+/**
+  * @brief  Perform a mass erase or erase the specified FLASH memory sectors
+  * @param[in]  pEraseInit: pointer to an FLASH_EraseInitTypeDef structure that
+  *         contains the configuration information for the erasing.
+  *
+  * @param[out]  SectorError: pointer to variable  that
+  *         contains the configuration information on faulty sector in case of error
+  *         (0xFFFFFFFF means that all the sectors have been correctly erased)
+  *
+  * @retval HAL Status
+  */
+HAL_StatusTypeDef HAL_FLASHEx_Erase(FLASH_EraseInitTypeDef *pEraseInit, uint32_t *SectorError)
+{
+  HAL_StatusTypeDef status = HAL_ERROR;
+  uint32_t index = 0;
+
+  /* Process Locked */
+  __HAL_LOCK(&pFlash);
+
+  /* Check the parameters */
+  assert_param(IS_FLASH_TYPEERASE(pEraseInit->TypeErase));
+
+  /* Wait for last operation to be completed */
+  status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+  if(status == HAL_OK)
+  {
+    /*Initialization of SectorError variable*/
+    *SectorError = 0xFFFFFFFF;
+
+    if(pEraseInit->TypeErase == FLASH_TYPEERASE_MASSERASE)
+    {
+      /*Mass erase to be done*/
+      FLASH_MassErase((uint8_t) pEraseInit->VoltageRange, pEraseInit->Banks);
+
+      /* Wait for last operation to be completed */
+      status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+      /* if the erase operation is completed, disable the MER Bit */
+      FLASH->CR &= (~FLASH_MER_BIT);
+    }
+    else
+    {
+      /* Check the parameters */
+      assert_param(IS_FLASH_NBSECTORS(pEraseInit->NbSectors + pEraseInit->Sector));
+
+      /* Erase by sector by sector to be done*/
+      for(index = pEraseInit->Sector; index < (pEraseInit->NbSectors + pEraseInit->Sector); index++)
+      {
+        FLASH_Erase_Sector(index, (uint8_t) pEraseInit->VoltageRange);
+
+        /* Wait for last operation to be completed */
+        status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+        /* If the erase operation is completed, disable the SER Bit */
+        FLASH->CR &= (~FLASH_CR_SER);
+        FLASH->CR &= SECTOR_MASK;
+
+        if(status != HAL_OK)
+        {
+          /* In case of error, stop erase procedure and return the faulty sector*/
+          *SectorError = index;
+          break;
+        }
+      }
+    }
+  }
+
+  /* Process Unlocked */
+  __HAL_UNLOCK(&pFlash);
+
+  return status;
+}
+
+/**
+  * @brief  Perform a mass erase or erase the specified FLASH memory sectors  with interrupt enabled
+  * @param  pEraseInit: pointer to an FLASH_EraseInitTypeDef structure that
+  *         contains the configuration information for the erasing.
+  *
+  * @retval HAL Status
+  */
+HAL_StatusTypeDef HAL_FLASHEx_Erase_IT(FLASH_EraseInitTypeDef *pEraseInit)
+{
+  HAL_StatusTypeDef status = HAL_OK;
+
+  /* Process Locked */
+  __HAL_LOCK(&pFlash);
+
+  /* Check the parameters */
+  assert_param(IS_FLASH_TYPEERASE(pEraseInit->TypeErase));
+
+  /* Enable End of FLASH Operation interrupt */
+  __HAL_FLASH_ENABLE_IT(FLASH_IT_EOP);
+
+  /* Enable Error source interrupt */
+  __HAL_FLASH_ENABLE_IT(FLASH_IT_ERR);
+
+  /* Clear pending flags (if any) */
+  __HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP    | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR |\
+                         FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR| FLASH_FLAG_PGSERR);
+
+  if(pEraseInit->TypeErase == FLASH_TYPEERASE_MASSERASE)
+  {
+    /*Mass erase to be done*/
+    pFlash.ProcedureOnGoing = FLASH_PROC_MASSERASE;
+    pFlash.Bank = pEraseInit->Banks;
+    FLASH_MassErase((uint8_t) pEraseInit->VoltageRange, pEraseInit->Banks);
+  }
+  else
+  {
+    /* Erase by sector to be done*/
+
+    /* Check the parameters */
+    assert_param(IS_FLASH_NBSECTORS(pEraseInit->NbSectors + pEraseInit->Sector));
+
+    pFlash.ProcedureOnGoing = FLASH_PROC_SECTERASE;
+    pFlash.NbSectorsToErase = pEraseInit->NbSectors;
+    pFlash.Sector = pEraseInit->Sector;
+    pFlash.VoltageForErase = (uint8_t)pEraseInit->VoltageRange;
+
+    /*Erase 1st sector and wait for IT*/
+    FLASH_Erase_Sector(pEraseInit->Sector, pEraseInit->VoltageRange);
+  }
+
+  return status;
+}
+
+/**
+  * @brief   Program option bytes
+  * @param  pOBInit: pointer to an FLASH_OBInitStruct structure that
+  *         contains the configuration information for the programming.
+  *
+  * @retval HAL Status
+  */
+HAL_StatusTypeDef HAL_FLASHEx_OBProgram(FLASH_OBProgramInitTypeDef *pOBInit)
+{
+  HAL_StatusTypeDef status = HAL_ERROR;
+
+  /* Process Locked */
+  __HAL_LOCK(&pFlash);
+
+  /* Check the parameters */
+  assert_param(IS_OPTIONBYTE(pOBInit->OptionType));
+
+  /*Write protection configuration*/
+  if((pOBInit->OptionType & OPTIONBYTE_WRP) == OPTIONBYTE_WRP)
+  {
+    assert_param(IS_WRPSTATE(pOBInit->WRPState));
+    if(pOBInit->WRPState == OB_WRPSTATE_ENABLE)
+    {
+      /*Enable of Write protection on the selected Sector*/
+      status = FLASH_OB_EnableWRP(pOBInit->WRPSector, pOBInit->Banks);
+    }
+    else
+    {
+      /*Disable of Write protection on the selected Sector*/
+      status = FLASH_OB_DisableWRP(pOBInit->WRPSector, pOBInit->Banks);
+    }
+  }
+
+  /*Read protection configuration*/
+  if((pOBInit->OptionType & OPTIONBYTE_RDP) == OPTIONBYTE_RDP)
+  {
+    status = FLASH_OB_RDP_LevelConfig(pOBInit->RDPLevel);
+  }
+
+  /*USER  configuration*/
+  if((pOBInit->OptionType & OPTIONBYTE_USER) == OPTIONBYTE_USER)
+  {
+    status = FLASH_OB_UserConfig(pOBInit->USERConfig&OB_IWDG_SW,
+                                     pOBInit->USERConfig&OB_STOP_NO_RST,
+                                     pOBInit->USERConfig&OB_STDBY_NO_RST);
+  }
+
+  /*BOR Level  configuration*/
+  if((pOBInit->OptionType & OPTIONBYTE_BOR) == OPTIONBYTE_BOR)
+  {
+    status = FLASH_OB_BOR_LevelConfig(pOBInit->BORLevel);
+  }
+
+  /* Process Unlocked */
+  __HAL_UNLOCK(&pFlash);
+
+  return status;
+}
+
+/**
+  * @brief   Get the Option byte configuration
+  * @param  pOBInit: pointer to an FLASH_OBInitStruct structure that
+  *         contains the configuration information for the programming.
+  *
+  * @retval None
+  */
+void HAL_FLASHEx_OBGetConfig(FLASH_OBProgramInitTypeDef *pOBInit)
+{
+  pOBInit->OptionType = OPTIONBYTE_WRP | OPTIONBYTE_RDP | OPTIONBYTE_USER | OPTIONBYTE_BOR;
+
+  /*Get WRP*/
+  pOBInit->WRPSector = (uint32_t)FLASH_OB_GetWRP();
+
+  /*Get RDP Level*/
+  pOBInit->RDPLevel = (uint32_t)FLASH_OB_GetRDP();
+
+  /*Get USER*/
+  pOBInit->USERConfig = (uint8_t)FLASH_OB_GetUser();
+
+  /*Get BOR Level*/
+  pOBInit->BORLevel = (uint32_t)FLASH_OB_GetBOR();
+}
+
+#if defined(STM32F427xx) || defined(STM32F437xx) || defined(STM32F429xx)|| defined(STM32F439xx) ||\
+    defined(STM32F401xC) || defined(STM32F401xE) || defined(STM32F411xE) || defined(STM32F446xx)
+/**
+  * @brief   Program option bytes
+  * @param  pAdvOBInit: pointer to an FLASH_AdvOBProgramInitTypeDef structure that
+  *         contains the configuration information for the programming.
+  *
+  * @retval HAL Status
+  */
+HAL_StatusTypeDef HAL_FLASHEx_AdvOBProgram (FLASH_AdvOBProgramInitTypeDef *pAdvOBInit)
+{
+  HAL_StatusTypeDef status = HAL_ERROR;
+
+  /* Check the parameters */
+  assert_param(IS_OBEX(pAdvOBInit->OptionType));
+
+  /*Program PCROP option byte*/
+  if(((pAdvOBInit->OptionType) & OPTIONBYTE_PCROP) == OPTIONBYTE_PCROP)
+  {
+    /* Check the parameters */
+    assert_param(IS_PCROPSTATE(pAdvOBInit->PCROPState));
+    if((pAdvOBInit->PCROPState) == OB_PCROP_STATE_ENABLE)
+    {
+      /*Enable of Write protection on the selected Sector*/
+#if defined(STM32F401xC) || defined(STM32F401xE) || defined(STM32F411xE) || defined(STM32F446xx)
+      status = FLASH_OB_EnablePCROP(pAdvOBInit->Sectors);
+#else  /* STM32F427xx || STM32F437xx || STM32F429xx|| STM32F439xx */
+      status = FLASH_OB_EnablePCROP(pAdvOBInit->SectorsBank1, pAdvOBInit->SectorsBank2, pAdvOBInit->Banks);
+#endif /* STM32F401xC || STM32F401xE || STM32F411xE || STM32F446xx */
+    }
+    else
+    {
+      /*Disable of Write protection on the selected Sector*/
+#if defined(STM32F401xC) || defined(STM32F401xE) || defined(STM32F411xE) || defined(STM32F446xx)
+      status = FLASH_OB_DisablePCROP(pAdvOBInit->Sectors);
+#else /* STM32F427xx || STM32F437xx || STM32F429xx|| STM32F439xx */
+      status = FLASH_OB_DisablePCROP(pAdvOBInit->SectorsBank1, pAdvOBInit->SectorsBank2, pAdvOBInit->Banks);
+#endif /* STM32F401xC || STM32F401xE || STM32F411xE || STM32F446xx */
+    }
+  }
+
+#if defined(STM32F427xx) || defined(STM32F437xx) || defined(STM32F429xx)|| defined(STM32F439xx)
+  /*Program BOOT config option byte*/
+  if(((pAdvOBInit->OptionType) & OPTIONBYTE_BOOTCONFIG) == OPTIONBYTE_BOOTCONFIG)
+  {
+    status = FLASH_OB_BootConfig(pAdvOBInit->BootConfig);
+  }
+#endif /* STM32F427xx || STM32F437xx || STM32F429xx || STM32F439xx */
+
+  return status;
+}
+
+/**
+  * @brief   Get the OBEX byte configuration
+  * @param  pAdvOBInit: pointer to an FLASH_AdvOBProgramInitTypeDef structure that
+  *         contains the configuration information for the programming.
+  *
+  * @retval None
+  */
+void HAL_FLASHEx_AdvOBGetConfig(FLASH_AdvOBProgramInitTypeDef *pAdvOBInit)
+{
+#if defined(STM32F401xC) || defined(STM32F401xE) || defined(STM32F411xE) || defined(STM32F446xx)
+  /*Get Sector*/
+  pAdvOBInit->Sectors = (*(__IO uint16_t *)(OPTCR_BYTE2_ADDRESS));
+#else  /* STM32F427xx || STM32F437xx || STM32F429xx|| STM32F439xx */
+  /*Get Sector for Bank1*/
+  pAdvOBInit->SectorsBank1 = (*(__IO uint16_t *)(OPTCR_BYTE2_ADDRESS));
+
+  /*Get Sector for Bank2*/
+  pAdvOBInit->SectorsBank2 = (*(__IO uint16_t *)(OPTCR1_BYTE2_ADDRESS));
+
+  /*Get Boot config OB*/
+  pAdvOBInit->BootConfig = *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS;
+#endif /* STM32F401xC || STM32F401xE || STM32F411xE || STM32F446xx */
+}
+
+/**
+  * @brief  Select the Protection Mode
+  *
+  * @note   After PCROP activated Option Byte modification NOT POSSIBLE! excepted
+  *         Global Read Out Protection modification (from level1 to level0)
+  * @note   Once SPRMOD bit is active unprotection of a protected sector is not possible
+  * @note   Read a protected sector will set RDERR Flag and write a protected sector will set WRPERR Flag
+  * @note   This function can be used only for STM32F42xxx/STM32F43xxx/STM32F401xx/STM32F411xx/STM32F446xx devices.
+  *
+  * @retval HAL Status
+  */
+HAL_StatusTypeDef HAL_FLASHEx_OB_SelectPCROP(void)
+{
+  uint8_t optiontmp = 0xFF;
+
+  /* Mask SPRMOD bit */
+  optiontmp =  (uint8_t)((*(__IO uint8_t *)OPTCR_BYTE3_ADDRESS) & (uint8_t)0x7F);
+
+  /* Update Option Byte */
+  *(__IO uint8_t *)OPTCR_BYTE3_ADDRESS = (uint8_t)(OB_PCROP_SELECTED | optiontmp);
+
+  return HAL_OK;
+}
+
+/**
+  * @brief  Deselect the Protection Mode
+  *
+  * @note   After PCROP activated Option Byte modification NOT POSSIBLE! excepted
+  *         Global Read Out Protection modification (from level1 to level0)
+  * @note   Once SPRMOD bit is active unprotection of a protected sector is not possible
+  * @note   Read a protected sector will set RDERR Flag and write a protected sector will set WRPERR Flag
+  * @note   This function can be used only for STM32F42xxx/STM32F43xxx/STM32F401xx/STM32F411xx/STM32F446xx devices.
+  *
+  * @retval HAL Status
+  */
+HAL_StatusTypeDef HAL_FLASHEx_OB_DeSelectPCROP(void)
+{
+  uint8_t optiontmp = 0xFF;
+
+  /* Mask SPRMOD bit */
+  optiontmp =  (uint8_t)((*(__IO uint8_t *)OPTCR_BYTE3_ADDRESS) & (uint8_t)0x7F);
+
+  /* Update Option Byte */
+  *(__IO uint8_t *)OPTCR_BYTE3_ADDRESS = (uint8_t)(OB_PCROP_DESELECTED | optiontmp);
+
+  return HAL_OK;
+}
+#endif /* STM32F427xx || STM32F437xx || STM32F429xx || STM32F439xx || STM32F401xC || STM32F401xE || STM32F411xE */
+
+#if defined(STM32F427xx) || defined(STM32F437xx) || defined(STM32F429xx)|| defined(STM32F439xx)
+/**
+  * @brief  Returns the FLASH Write Protection Option Bytes value for Bank 2
+  * @note   This function can be used only for STM32F427X and STM32F429X devices.
+  * @retval The FLASH Write Protection  Option Bytes value
+  */
+uint16_t HAL_FLASHEx_OB_GetBank2WRP(void)
+{
+  /* Return the FLASH write protection Register value */
+  return (*(__IO uint16_t *)(OPTCR1_BYTE2_ADDRESS));
+}
+#endif /* STM32F427xx || STM32F437xx || STM32F429xx || STM32F439xx */
+
+/**
+  * @}
+  */
+
+#if defined(STM32F427xx) || defined(STM32F437xx) || defined(STM32F429xx)|| defined(STM32F439xx)
+/**
+  * @brief  Full erase of FLASH memory sectors
+  * @param  VoltageRange: The device voltage range which defines the erase parallelism.
+  *          This parameter can be one of the following values:
+  *            @arg FLASH_VOLTAGE_RANGE_1: when the device voltage range is 1.8V to 2.1V,
+  *                                  the operation will be done by byte (8-bit)
+  *            @arg FLASH_VOLTAGE_RANGE_2: when the device voltage range is 2.1V to 2.7V,
+  *                                  the operation will be done by half word (16-bit)
+  *            @arg FLASH_VOLTAGE_RANGE_3: when the device voltage range is 2.7V to 3.6V,
+  *                                  the operation will be done by word (32-bit)
+  *            @arg FLASH_VOLTAGE_RANGE_4: when the device voltage range is 2.7V to 3.6V + External Vpp,
+  *                                  the operation will be done by double word (64-bit)
+  *
+  * @param  Banks: Banks to be erased
+  *          This parameter can be one of the following values:
+  *            @arg FLASH_BANK_1: Bank1 to be erased
+  *            @arg FLASH_BANK_2: Bank2 to be erased
+  *            @arg FLASH_BANK_BOTH: Bank1 and Bank2 to be erased
+  *
+  * @retval HAL Status
+  */
+static void FLASH_MassErase(uint8_t VoltageRange, uint32_t Banks)
+{
+  uint32_t tmp_psize = 0;
+
+  /* Check the parameters */
+  assert_param(IS_VOLTAGERANGE(VoltageRange));
+  assert_param(IS_FLASH_BANK(Banks));
+
+  /* if the previous operation is completed, proceed to erase all sectors */
+  FLASH->CR &= CR_PSIZE_MASK;
+  FLASH->CR |= tmp_psize;
+  if(Banks == FLASH_BANK_BOTH)
+  {
+    /* bank1 & bank2 will be erased*/
+    FLASH->CR |= FLASH_MER_BIT;
+  }
+  else if(Banks == FLASH_BANK_1)
+  {
+    /*Only bank1 will be erased*/
+    FLASH->CR |= FLASH_CR_MER1;
+  }
+  else
+  {
+    /*Only bank2 will be erased*/
+    FLASH->CR |= FLASH_CR_MER2;
+  }
+  FLASH->CR |= FLASH_CR_STRT;
+}
+
+/**
+  * @brief  Erase the specified FLASH memory sector
+  * @param  Sector: FLASH sector to erase
+  *         The value of this parameter depend on device used within the same series
+  * @param  VoltageRange: The device voltage range which defines the erase parallelism.
+  *          This parameter can be one of the following values:
+  *            @arg FLASH_VOLTAGE_RANGE_1: when the device voltage range is 1.8V to 2.1V,
+  *                                  the operation will be done by byte (8-bit)
+  *            @arg FLASH_VOLTAGE_RANGE_2: when the device voltage range is 2.1V to 2.7V,
+  *                                  the operation will be done by half word (16-bit)
+  *            @arg FLASH_VOLTAGE_RANGE_3: when the device voltage range is 2.7V to 3.6V,
+  *                                  the operation will be done by word (32-bit)
+  *            @arg FLASH_VOLTAGE_RANGE_4: when the device voltage range is 2.7V to 3.6V + External Vpp,
+  *                                  the operation will be done by double word (64-bit)
+  *
+  * @retval None
+  */
+void FLASH_Erase_Sector(uint32_t Sector, uint8_t VoltageRange)
+{
+  uint32_t tmp_psize = 0;
+
+  /* Check the parameters */
+  assert_param(IS_FLASH_SECTOR(Sector));
+  assert_param(IS_VOLTAGERANGE(VoltageRange));
+
+  if(VoltageRange == FLASH_VOLTAGE_RANGE_1)
+  {
+     tmp_psize = FLASH_PSIZE_BYTE;
+  }
+  else if(VoltageRange == FLASH_VOLTAGE_RANGE_2)
+  {
+    tmp_psize = FLASH_PSIZE_HALF_WORD;
+  }
+  else if(VoltageRange == FLASH_VOLTAGE_RANGE_3)
+  {
+    tmp_psize = FLASH_PSIZE_WORD;
+  }
+  else
+  {
+    tmp_psize = FLASH_PSIZE_DOUBLE_WORD;
+  }
+
+  /* Need to add offset of 4 when sector higher than FLASH_SECTOR_11 */
+  if(Sector > FLASH_SECTOR_11)
+  {
+    Sector += 4;
+  }
+  /* If the previous operation is completed, proceed to erase the sector */
+  FLASH->CR &= CR_PSIZE_MASK;
+  FLASH->CR |= tmp_psize;
+  FLASH->CR &= SECTOR_MASK;
+  FLASH->CR |= FLASH_CR_SER | (Sector << POSITION_VAL(FLASH_CR_SNB));
+  FLASH->CR |= FLASH_CR_STRT;
+}
+
+/**
+  * @brief  Enable the write protection of the desired bank1 or bank 2 sectors
+  *
+  * @note   When the memory read protection level is selected (RDP level = 1),
+  *         it is not possible to program or erase the flash sector i if CortexM4
+  *         debug features are connected or boot code is executed in RAM, even if nWRPi = 1
+  * @note   Active value of nWRPi bits is inverted when PCROP mode is active (SPRMOD =1).
+  *
+  * @param  WRPSector: specifies the sector(s) to be write protected.
+  *          This parameter can be one of the following values:
+  *            @arg WRPSector: A value between OB_WRP_SECTOR_0 and OB_WRP_SECTOR_23
+  *            @arg OB_WRP_SECTOR_All
+  * @note   BANK2 starts from OB_WRP_SECTOR_12
+  *
+  * @param  Banks: Enable write protection on all the sectors for the specific bank
+  *          This parameter can be one of the following values:
+  *            @arg FLASH_BANK_1: WRP on all sectors of bank1
+  *            @arg FLASH_BANK_2: WRP on all sectors of bank2
+  *            @arg FLASH_BANK_BOTH: WRP on all sectors of bank1 & bank2
+  *
+  * @retval HAL FLASH State
+  */
+static HAL_StatusTypeDef FLASH_OB_EnableWRP(uint32_t WRPSector, uint32_t Banks)
+{
+  HAL_StatusTypeDef status = HAL_OK;
+
+  /* Check the parameters */
+  assert_param(IS_OB_WRP_SECTOR(WRPSector));
+  assert_param(IS_FLASH_BANK(Banks));
+
+  /* Wait for last operation to be completed */
+  status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+  if(status == HAL_OK)
+  {
+    if(((WRPSector == OB_WRP_SECTOR_All) && ((Banks == FLASH_BANK_1) || (Banks == FLASH_BANK_BOTH))) ||
+         (WRPSector < OB_WRP_SECTOR_12))
+    {
+       if(WRPSector == OB_WRP_SECTOR_All)
+       {
+          /*Write protection on all sector of BANK1*/
+          *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS &= (~(WRPSector>>12));
+       }
+       else
+       {
+          /*Write protection done on sectors of BANK1*/
+          *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS &= (~WRPSector);
+       }
+    }
+    else
+    {
+      /*Write protection done on sectors of BANK2*/
+      *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS &= (~(WRPSector>>12));
+    }
+
+    /*Write protection on all sector of BANK2*/
+    if((WRPSector == OB_WRP_SECTOR_All) && (Banks == FLASH_BANK_BOTH))
+    {
+      /* Wait for last operation to be completed */
+      status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+      if(status == HAL_OK)
+      {
+        *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS &= (~(WRPSector>>12));
+      }
+    }
+
+  }
+  return status;
+}
+
+/**
+  * @brief  Disable the write protection of the desired bank1 or bank 2 sectors
+  *
+  * @note   When the memory read protection level is selected (RDP level = 1),
+  *         it is not possible to program or erase the flash sector i if CortexM4
+  *         debug features are connected or boot code is executed in RAM, even if nWRPi = 1
+  * @note   Active value of nWRPi bits is inverted when PCROP mode is active (SPRMOD =1).
+  *
+  * @param  WRPSector: specifies the sector(s) to be write protected.
+  *          This parameter can be one of the following values:
+  *            @arg WRPSector: A value between OB_WRP_SECTOR_0 and OB_WRP_SECTOR_23
+  *            @arg OB_WRP_Sector_All
+  * @note   BANK2 starts from OB_WRP_SECTOR_12
+  *
+  * @param  Banks: Disable write protection on all the sectors for the specific bank
+  *          This parameter can be one of the following values:
+  *            @arg FLASH_BANK_1: Bank1 to be erased
+  *            @arg FLASH_BANK_2: Bank2 to be erased
+  *            @arg FLASH_BANK_BOTH: Bank1 and Bank2 to be erased
+  *
+  * @retval HAL Status
+  */
+static HAL_StatusTypeDef FLASH_OB_DisableWRP(uint32_t WRPSector, uint32_t Banks)
+{
+  HAL_StatusTypeDef status = HAL_OK;
+
+  /* Check the parameters */
+  assert_param(IS_OB_WRP_SECTOR(WRPSector));
+  assert_param(IS_FLASH_BANK(Banks));
+
+  /* Wait for last operation to be completed */
+  status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+  if(status == HAL_OK)
+  {
+    if(((WRPSector == OB_WRP_SECTOR_All) && ((Banks == FLASH_BANK_1) || (Banks == FLASH_BANK_BOTH))) ||
+         (WRPSector < OB_WRP_SECTOR_12))
+    {
+       if(WRPSector == OB_WRP_SECTOR_All)
+       {
+          /*Write protection on all sector of BANK1*/
+          *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS |= (uint16_t)(WRPSector>>12);
+       }
+       else
+       {
+          /*Write protection done on sectors of BANK1*/
+          *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS |= (uint16_t)WRPSector;
+       }
+    }
+    else
+    {
+      /*Write protection done on sectors of BANK2*/
+      *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS |= (uint16_t)(WRPSector>>12);
+    }
+
+    /*Write protection on all sector  of BANK2*/
+    if((WRPSector == OB_WRP_SECTOR_All) && (Banks == FLASH_BANK_BOTH))
+    {
+      /* Wait for last operation to be completed */
+      status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+      if(status == HAL_OK)
+      {
+        *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS |= (uint16_t)(WRPSector>>12);
+      }
+    }
+
+  }
+
+  return status;
+}
+
+/**
+  * @brief  Configure the Dual Bank Boot.
+  *
+  * @note   This function can be used only for STM32F42xxx/43xxx devices.
+  *
+  * @param  BootConfig specifies the Dual Bank Boot Option byte.
+  *          This parameter can be one of the following values:
+  *            @arg OB_Dual_BootEnabled: Dual Bank Boot Enable
+  *            @arg OB_Dual_BootDisabled: Dual Bank Boot Disabled
+  * @retval None
+  */
+static HAL_StatusTypeDef FLASH_OB_BootConfig(uint8_t BootConfig)
+{
+  HAL_StatusTypeDef status = HAL_OK;
+
+  /* Check the parameters */
+  assert_param(IS_OB_BOOT(BootConfig));
+
+  /* Wait for last operation to be completed */
+  status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+  if(status == HAL_OK)
+  {
+    /* Set Dual Bank Boot */
+    *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS &= (~FLASH_OPTCR_BFB2);
+    *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS |= BootConfig;
+  }
+
+  return status;
+}
+
+/**
+  * @brief  Enable the read/write protection (PCROP) of the desired
+  *         sectors of Bank 1 and/or Bank 2.
+  * @note   This function can be used only for STM32F42xxx/43xxx devices.
+  * @param  SectorBank1 Specifies the sector(s) to be read/write protected or unprotected for bank1.
+  *          This parameter can be one of the following values:
+  *            @arg OB_PCROP: A value between OB_PCROP_SECTOR_0 and OB_PCROP_SECTOR_11
+  *            @arg OB_PCROP_SECTOR__All
+  * @param  SectorBank2 Specifies the sector(s) to be read/write protected or unprotected for bank2.
+  *          This parameter can be one of the following values:
+  *            @arg OB_PCROP: A value between OB_PCROP_SECTOR_12 and OB_PCROP_SECTOR_23
+  *            @arg OB_PCROP_SECTOR__All
+  * @param  Banks Enable PCROP protection on all the sectors for the specific bank
+  *          This parameter can be one of the following values:
+  *            @arg FLASH_BANK_1: WRP on all sectors of bank1
+  *            @arg FLASH_BANK_2: WRP on all sectors of bank2
+  *            @arg FLASH_BANK_BOTH: WRP on all sectors of bank1 & bank2
+  *
+  * @retval HAL Status
+  */
+static HAL_StatusTypeDef FLASH_OB_EnablePCROP(uint32_t SectorBank1, uint32_t SectorBank2, uint32_t Banks)
+{
+  HAL_StatusTypeDef status = HAL_OK;
+
+  assert_param(IS_FLASH_BANK(Banks));
+
+  /* Wait for last operation to be completed */
+  status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+  if(status == HAL_OK)
+  {
+    if((Banks == FLASH_BANK_1) || (Banks == FLASH_BANK_BOTH))
+    {
+      assert_param(IS_OB_PCROP(SectorBank1));
+      /*Write protection done on sectors of BANK1*/
+      *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS |= (uint16_t)SectorBank1;
+    }
+    else
+    {
+      assert_param(IS_OB_PCROP(SectorBank2));
+      /*Write protection done on sectors of BANK2*/
+      *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS |= (uint16_t)SectorBank2;
+    }
+
+    /*Write protection on all sector  of BANK2*/
+    if(Banks == FLASH_BANK_BOTH)
+    {
+      assert_param(IS_OB_PCROP(SectorBank2));
+      /* Wait for last operation to be completed */
+      status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+      if(status == HAL_OK)
+      {
+        /*Write protection done on sectors of BANK2*/
+        *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS |= (uint16_t)SectorBank2;
+      }
+    }
+
+  }
+
+  return status;
+}
+
+
+/**
+  * @brief  Disable the read/write protection (PCROP) of the desired
+  *         sectors  of Bank 1 and/or Bank 2.
+  * @note   This function can be used only for STM32F42xxx/43xxx devices.
+  * @param  SectorBank1 specifies the sector(s) to be read/write protected or unprotected for bank1.
+  *          This parameter can be one of the following values:
+  *            @arg OB_PCROP: A value between OB_PCROP_SECTOR_0 and OB_PCROP_SECTOR_11
+  *            @arg OB_PCROP_SECTOR__All
+  * @param  SectorBank2 Specifies the sector(s) to be read/write protected or unprotected for bank2.
+  *          This parameter can be one of the following values:
+  *            @arg OB_PCROP: A value between OB_PCROP_SECTOR_12 and OB_PCROP_SECTOR_23
+  *            @arg OB_PCROP_SECTOR__All
+  * @param  Banks Disable PCROP protection on all the sectors for the specific bank
+  *          This parameter can be one of the following values:
+  *            @arg FLASH_BANK_1: WRP on all sectors of bank1
+  *            @arg FLASH_BANK_2: WRP on all sectors of bank2
+  *            @arg FLASH_BANK_BOTH: WRP on all sectors of bank1 & bank2
+  *
+  * @retval HAL Status
+  */
+static HAL_StatusTypeDef FLASH_OB_DisablePCROP(uint32_t SectorBank1, uint32_t SectorBank2, uint32_t Banks)
+{
+  HAL_StatusTypeDef status = HAL_OK;
+
+  /* Check the parameters */
+  assert_param(IS_FLASH_BANK(Banks));
+
+  /* Wait for last operation to be completed */
+  status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+  if(status == HAL_OK)
+  {
+    if((Banks == FLASH_BANK_1) || (Banks == FLASH_BANK_BOTH))
+    {
+      assert_param(IS_OB_PCROP(SectorBank1));
+      /*Write protection done on sectors of BANK1*/
+      *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS &= (~SectorBank1);
+    }
+    else
+    {
+      /*Write protection done on sectors of BANK2*/
+      assert_param(IS_OB_PCROP(SectorBank2));
+      *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS &= (~SectorBank2);
+    }
+
+    /*Write protection on all sector  of BANK2*/
+    if(Banks == FLASH_BANK_BOTH)
+    {
+      assert_param(IS_OB_PCROP(SectorBank2));
+     /* Wait for last operation to be completed */
+      status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+      if(status == HAL_OK)
+      {
+        /*Write protection done on sectors of BANK2*/
+        *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS &= (~SectorBank2);
+      }
+    }
+
+  }
+
+  return status;
+
+}
+
+#endif /* STM32F427xx || STM32F437xx || STM32F429xx || STM32F439xx */
+
+#if defined(STM32F405xx) || defined(STM32F415xx) || defined(STM32F407xx)|| defined(STM32F417xx) ||\
+    defined(STM32F401xC) || defined(STM32F401xE) || defined(STM32F411xE) || defined(STM32F446xx)
+/**
+  * @brief  Mass erase of FLASH memory
+  * @param  VoltageRange: The device voltage range which defines the erase parallelism.
+  *          This parameter can be one of the following values:
+  *            @arg FLASH_VOLTAGE_RANGE_1: when the device voltage range is 1.8V to 2.1V,
+  *                                  the operation will be done by byte (8-bit)
+  *            @arg FLASH_VOLTAGE_RANGE_2: when the device voltage range is 2.1V to 2.7V,
+  *                                  the operation will be done by half word (16-bit)
+  *            @arg FLASH_VOLTAGE_RANGE_3: when the device voltage range is 2.7V to 3.6V,
+  *                                  the operation will be done by word (32-bit)
+  *            @arg FLASH_VOLTAGE_RANGE_4: when the device voltage range is 2.7V to 3.6V + External Vpp,
+  *                                  the operation will be done by double word (64-bit)
+  *
+  * @param  Banks: Banks to be erased
+  *          This parameter can be one of the following values:
+  *            @arg FLASH_BANK_1: Bank1 to be erased
+  *
+  * @retval None
+  */
+static void FLASH_MassErase(uint8_t VoltageRange, uint32_t Banks)
+{
+  uint32_t tmp_psize = 0;
+
+  /* Check the parameters */
+  assert_param(IS_VOLTAGERANGE(VoltageRange));
+  assert_param(IS_FLASH_BANK(Banks));
+
+  /* If the previous operation is completed, proceed to erase all sectors */
+   FLASH->CR &= CR_PSIZE_MASK;
+   FLASH->CR |= tmp_psize;
+   FLASH->CR |= FLASH_CR_MER;
+   FLASH->CR |= FLASH_CR_STRT;
+}
+
+/**
+  * @brief  Erase the specified FLASH memory sector
+  * @param  Sector: FLASH sector to erase
+  *         The value of this parameter depend on device used within the same series
+  * @param  VoltageRange: The device voltage range which defines the erase parallelism.
+  *          This parameter can be one of the following values:
+  *            @arg FLASH_VOLTAGE_RANGE_1: when the device voltage range is 1.8V to 2.1V,
+  *                                  the operation will be done by byte (8-bit)
+  *            @arg FLASH_VOLTAGE_RANGE_2: when the device voltage range is 2.1V to 2.7V,
+  *                                  the operation will be done by half word (16-bit)
+  *            @arg FLASH_VOLTAGE_RANGE_3: when the device voltage range is 2.7V to 3.6V,
+  *                                  the operation will be done by word (32-bit)
+  *            @arg FLASH_VOLTAGE_RANGE_4: when the device voltage range is 2.7V to 3.6V + External Vpp,
+  *                                  the operation will be done by double word (64-bit)
+  *
+  * @retval None
+  */
+void FLASH_Erase_Sector(uint32_t Sector, uint8_t VoltageRange)
+{
+  uint32_t tmp_psize = 0;
+
+  /* Check the parameters */
+  assert_param(IS_FLASH_SECTOR(Sector));
+  assert_param(IS_VOLTAGERANGE(VoltageRange));
+
+  if(VoltageRange == FLASH_VOLTAGE_RANGE_1)
+  {
+     tmp_psize = FLASH_PSIZE_BYTE;
+  }
+  else if(VoltageRange == FLASH_VOLTAGE_RANGE_2)
+  {
+    tmp_psize = FLASH_PSIZE_HALF_WORD;
+  }
+  else if(VoltageRange == FLASH_VOLTAGE_RANGE_3)
+  {
+    tmp_psize = FLASH_PSIZE_WORD;
+  }
+  else
+  {
+    tmp_psize = FLASH_PSIZE_DOUBLE_WORD;
+  }
+
+  /* If the previous operation is completed, proceed to erase the sector */
+  FLASH->CR &= CR_PSIZE_MASK;
+  FLASH->CR |= tmp_psize;
+  FLASH->CR &= SECTOR_MASK;
+  FLASH->CR |= FLASH_CR_SER | (Sector << POSITION_VAL(FLASH_CR_SNB));
+  FLASH->CR |= FLASH_CR_STRT;
+}
+
+/**
+  * @brief  Enable the write protection of the desired bank 1 sectors
+  *
+  * @note   When the memory read protection level is selected (RDP level = 1),
+  *         it is not possible to program or erase the flash sector i if CortexM4
+  *         debug features are connected or boot code is executed in RAM, even if nWRPi = 1
+  * @note   Active value of nWRPi bits is inverted when PCROP mode is active (SPRMOD =1).
+  *
+  * @param  WRPSector: specifies the sector(s) to be write protected.
+  *         The value of this parameter depend on device used within the same series
+  *
+  * @param  Banks: Enable write protection on all the sectors for the specific bank
+  *          This parameter can be one of the following values:
+  *            @arg FLASH_BANK_1: WRP on all sectors of bank1
+  *
+  * @retval HAL Status
+  */
+static HAL_StatusTypeDef FLASH_OB_EnableWRP(uint32_t WRPSector, uint32_t Banks)
+{
+  HAL_StatusTypeDef status = HAL_OK;
+
+  /* Check the parameters */
+  assert_param(IS_OB_WRP_SECTOR(WRPSector));
+  assert_param(IS_FLASH_BANK(Banks));
+
+  /* Wait for last operation to be completed */
+  status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+  if(status == HAL_OK)
+  {
+    *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS &= (~WRPSector);
+  }
+
+  return status;
+}
+
+/**
+  * @brief  Disable the write protection of the desired bank 1 sectors
+  *
+  * @note   When the memory read protection level is selected (RDP level = 1),
+  *         it is not possible to program or erase the flash sector i if CortexM4
+  *         debug features are connected or boot code is executed in RAM, even if nWRPi = 1
+  * @note   Active value of nWRPi bits is inverted when PCROP mode is active (SPRMOD =1).
+  *
+  * @param  WRPSector: specifies the sector(s) to be write protected.
+  *         The value of this parameter depend on device used within the same series
+  *
+  * @param  Banks: Enable write protection on all the sectors for the specific bank
+  *          This parameter can be one of the following values:
+  *            @arg FLASH_BANK_1: WRP on all sectors of bank1
+  *
+  * @retval HAL Status
+  */
+static HAL_StatusTypeDef FLASH_OB_DisableWRP(uint32_t WRPSector, uint32_t Banks)
+{
+  HAL_StatusTypeDef status = HAL_OK;
+
+  /* Check the parameters */
+  assert_param(IS_OB_WRP_SECTOR(WRPSector));
+  assert_param(IS_FLASH_BANK(Banks));
+
+  /* Wait for last operation to be completed */
+  status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+  if(status == HAL_OK)
+  {
+    *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS |= (uint16_t)WRPSector;
+  }
+
+  return status;
+}
+#endif /* STM32F40xxx || STM32F41xxx || STM32F401xx || STM32F411xE || STM32F446xx */
+
+#if defined(STM32F401xC) || defined(STM32F401xE) || defined(STM32F411xE) || defined(STM32F446xx)
+/**
+  * @brief  Enable the read/write protection (PCROP) of the desired sectors.
+  * @note   This function can be used only for STM32F401xx devices.
+  * @param  Sector specifies the sector(s) to be read/write protected or unprotected.
+  *          This parameter can be one of the following values:
+  *            @arg OB_PCROP: A value between OB_PCROP_Sector0 and OB_PCROP_Sector5
+  *            @arg OB_PCROP_Sector_All
+  * @retval HAL Status
+  */
+static HAL_StatusTypeDef FLASH_OB_EnablePCROP(uint32_t Sector)
+{
+  HAL_StatusTypeDef status = HAL_OK;
+
+  /* Check the parameters */
+  assert_param(IS_OB_PCROP(Sector));
+
+  /* Wait for last operation to be completed */
+  status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+  if(status == HAL_OK)
+  {
+    *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS |= (uint16_t)Sector;
+  }
+
+  return status;
+}
+
+
+/**
+  * @brief  Disable the read/write protection (PCROP) of the desired sectors.
+  * @note   This function can be used only for STM32F401xx devices.
+  * @param  Sector specifies the sector(s) to be read/write protected or unprotected.
+  *          This parameter can be one of the following values:
+  *            @arg OB_PCROP: A value between OB_PCROP_Sector0 and OB_PCROP_Sector5
+  *            @arg OB_PCROP_Sector_All
+  * @retval HAL Status
+  */
+static HAL_StatusTypeDef FLASH_OB_DisablePCROP(uint32_t Sector)
+{
+  HAL_StatusTypeDef status = HAL_OK;
+
+  /* Check the parameters */
+  assert_param(IS_OB_PCROP(Sector));
+
+  /* Wait for last operation to be completed */
+  status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+  if(status == HAL_OK)
+  {
+    *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS &= (~Sector);
+  }
+
+  return status;
+
+}
+#endif /* STM32F401xC || STM32F401xE || STM32F411xE || STM32F446xx */
+
+/**
+  * @brief  Set the read protection level.
+  * @param  Level: specifies the read protection level.
+  *          This parameter can be one of the following values:
+  *            @arg OB_RDP_LEVEL_0: No protection
+  *            @arg OB_RDP_LEVEL_1: Read protection of the memory
+  *            @arg OB_RDP_LEVEL_2: Full chip protection
+  *
+  * @note WARNING: When enabling OB_RDP level 2 it's no more possible to go back to level 1 or 0
+  *
+  * @retval HAL Status
+  */
+static HAL_StatusTypeDef FLASH_OB_RDP_LevelConfig(uint8_t Level)
+{
+  HAL_StatusTypeDef status = HAL_OK;
+
+  /* Check the parameters */
+  assert_param(IS_OB_RDP_LEVEL(Level));
+
+  /* Wait for last operation to be completed */
+  status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+  if(status == HAL_OK)
+  {
+    *(__IO uint8_t*)OPTCR_BYTE1_ADDRESS = Level;
+  }
+
+  return status;
+}
+
+/**
+  * @brief  Program the FLASH User Option Byte: IWDG_SW / RST_STOP / RST_STDBY.
+  * @param  Iwdg: Selects the IWDG mode
+  *          This parameter can be one of the following values:
+  *            @arg OB_IWDG_SW: Software IWDG selected
+  *            @arg OB_IWDG_HW: Hardware IWDG selected
+  * @param  Stop: Reset event when entering STOP mode.
+  *          This parameter  can be one of the following values:
+  *            @arg OB_STOP_NO_RST: No reset generated when entering in STOP
+  *            @arg OB_STOP_RST: Reset generated when entering in STOP
+  * @param  Stdby: Reset event when entering Standby mode.
+  *          This parameter  can be one of the following values:
+  *            @arg OB_STDBY_NO_RST: No reset generated when entering in STANDBY
+  *            @arg OB_STDBY_RST: Reset generated when entering in STANDBY
+  * @retval HAL Status
+  */
+static HAL_StatusTypeDef FLASH_OB_UserConfig(uint8_t Iwdg, uint8_t Stop, uint8_t Stdby)
+{
+  uint8_t optiontmp = 0xFF;
+  HAL_StatusTypeDef status = HAL_OK;
+
+  /* Check the parameters */
+  assert_param(IS_OB_IWDG_SOURCE(Iwdg));
+  assert_param(IS_OB_STOP_SOURCE(Stop));
+  assert_param(IS_OB_STDBY_SOURCE(Stdby));
+
+  /* Wait for last operation to be completed */
+  status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+  if(status == HAL_OK)
+  {
+    /* Mask OPTLOCK, OPTSTRT, BOR_LEV and BFB2 bits */
+    optiontmp =  (uint8_t)((*(__IO uint8_t *)OPTCR_BYTE0_ADDRESS) & (uint8_t)0x1F);
+
+    /* Update User Option Byte */
+    *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS = Iwdg | (uint8_t)(Stdby | (uint8_t)(Stop | ((uint8_t)optiontmp)));
+  }
+
+  return status;
+}
+
+/**
+  * @brief  Set the BOR Level.
+  * @param  Level: specifies the Option Bytes BOR Reset Level.
+  *          This parameter can be one of the following values:
+  *            @arg OB_BOR_LEVEL3: Supply voltage ranges from 2.7 to 3.6 V
+  *            @arg OB_BOR_LEVEL2: Supply voltage ranges from 2.4 to 2.7 V
+  *            @arg OB_BOR_LEVEL1: Supply voltage ranges from 2.1 to 2.4 V
+  *            @arg OB_BOR_OFF: Supply voltage ranges from 1.62 to 2.1 V
+  * @retval HAL Status
+  */
+static HAL_StatusTypeDef FLASH_OB_BOR_LevelConfig(uint8_t Level)
+{
+  /* Check the parameters */
+  assert_param(IS_OB_BOR_LEVEL(Level));
+
+  /* Set the BOR Level */
+  *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS &= (~FLASH_OPTCR_BOR_LEV);
+  *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS |= Level;
+
+  return HAL_OK;
+}
+
+/**
+  * @brief  Return the FLASH User Option Byte value.
+  * @retval uint8_t FLASH User Option Bytes values: IWDG_SW(Bit0), RST_STOP(Bit1)
+  *         and RST_STDBY(Bit2).
+  */
+static uint8_t FLASH_OB_GetUser(void)
+{
+  /* Return the User Option Byte */
+  return ((uint8_t)(FLASH->OPTCR & 0xE0));
+}
+
+/**
+  * @brief  Return the FLASH Write Protection Option Bytes value.
+  * @retval uint16_t FLASH Write Protection Option Bytes value
+  */
+static uint16_t FLASH_OB_GetWRP(void)
+{
+  /* Return the FLASH write protection Register value */
+  return (*(__IO uint16_t *)(OPTCR_BYTE2_ADDRESS));
+}
+
+/**
+  * @brief  Returns the FLASH Read Protection level.
+  * @retval FLASH ReadOut Protection Status:
+  *         This parameter can be one of the following values:
+  *            @arg OB_RDP_LEVEL_0: No protection
+  *            @arg OB_RDP_LEVEL_1: Read protection of the memory
+  *            @arg OB_RDP_LEVEL_2: Full chip protection
+  */
+static uint8_t FLASH_OB_GetRDP(void)
+{
+  uint8_t readstatus = OB_RDP_LEVEL_0;
+
+  if((*(__IO uint8_t*)(OPTCR_BYTE1_ADDRESS) == (uint8_t)OB_RDP_LEVEL_2))
+  {
+    readstatus = OB_RDP_LEVEL_2;
+  }
+  else if((*(__IO uint8_t*)(OPTCR_BYTE1_ADDRESS) == (uint8_t)OB_RDP_LEVEL_1))
+  {
+    readstatus = OB_RDP_LEVEL_1;
+  }
+  else
+  {
+    readstatus = OB_RDP_LEVEL_0;
+  }
+
+  return readstatus;
+}
+
+/**
+  * @brief  Returns the FLASH BOR level.
+  * @retval uint8_t The FLASH BOR level:
+  *           - OB_BOR_LEVEL3: Supply voltage ranges from 2.7 to 3.6 V
+  *           - OB_BOR_LEVEL2: Supply voltage ranges from 2.4 to 2.7 V
+  *           - OB_BOR_LEVEL1: Supply voltage ranges from 2.1 to 2.4 V
+  *           - OB_BOR_OFF   : Supply voltage ranges from 1.62 to 2.1 V
+  */
+static uint8_t FLASH_OB_GetBOR(void)
+{
+  /* Return the FLASH BOR level */
+  return (uint8_t)(*(__IO uint8_t *)(OPTCR_BYTE0_ADDRESS) & (uint8_t)0x0C);
+}
+
+/**
+  * @}
+  */
+
+#endif /* HAL_FLASH_MODULE_ENABLED */
+
+/**
+  * @}
+  */
+
+/**
+  * @}
+  */
+
+/************************ (C) COPYRIGHT STMicroelectronics *****END OF FILE****/