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authorFredrik Thulin <fredrik@thulin.net>2016-05-23 21:59:17 +0200
committerFredrik Thulin <fredrik@thulin.net>2016-05-23 21:59:17 +0200
commit6265025f7cd7f606b6da62c7add13a6008500cf7 (patch)
tree7761c2a2136ed59fab776c6e2c78427a3082fd10 /stm-sdram.c
parent50f9d40503e5f9cb24241c4c584db3cb94af07aa (diff)
SDRAM initialization and test code from Pavel.
Integrated into the cli-test program as such: cryptech> test sdram Initializing SDRAM Starting SDRAM test (n = 0) Run sequential write-then-read test for the first chip Run random write-then-read test for the first chip Run sequential write-then-read test for the second chip Run random write-then-read test for the second chip Run interleaved write-then-read test for both chips at once SDRAM test (n = 0) completed SDRAM test completed successfully cryptech>
Diffstat (limited to 'stm-sdram.c')
-rw-r--r--stm-sdram.c267
1 files changed, 267 insertions, 0 deletions
diff --git a/stm-sdram.c b/stm-sdram.c
new file mode 100644
index 0000000..0ec8065
--- /dev/null
+++ b/stm-sdram.c
@@ -0,0 +1,267 @@
+/*
+ * stm-sdram.c
+ * -----------
+ * Functions concerning the 2x512 Mbit SDRAM working memory.
+ *
+ * Copyright (c) 2016, NORDUnet A/S All rights reserved.
+ *
+ * Redistribution and use in source and binary forms, with or without
+ * modification, are permitted provided that the following conditions are
+ * met:
+ * - Redistributions of source code must retain the above copyright notice,
+ * this list of conditions and the following disclaimer.
+ *
+ * - Redistributions in binary form must reproduce the above copyright
+ * notice, this list of conditions and the following disclaimer in the
+ * documentation and/or other materials provided with the distribution.
+ *
+ * - Neither the name of the NORDUnet nor the names of its contributors may
+ * be used to endorse or promote products derived from this software
+ * without specific prior written permission.
+ *
+ * THIS SOFTWARE IS PROVIDED BY THE COPYRIGHT HOLDERS AND CONTRIBUTORS "AS
+ * IS" AND ANY EXPRESS OR IMPLIED WARRANTIES, INCLUDING, BUT NOT LIMITED
+ * TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
+ * PARTICULAR PURPOSE ARE DISCLAIMED. IN NO EVENT SHALL THE COPYRIGHT
+ * HOLDER OR CONTRIBUTORS BE LIABLE FOR ANY DIRECT, INDIRECT, INCIDENTAL,
+ * SPECIAL, EXEMPLARY, OR CONSEQUENTIAL DAMAGES (INCLUDING, BUT NOT LIMITED
+ * TO, PROCUREMENT OF SUBSTITUTE GOODS OR SERVICES; LOSS OF USE, DATA, OR
+ * PROFITS; OR BUSINESS INTERRUPTION) HOWEVER CAUSED AND ON ANY THEORY OF
+ * LIABILITY, WHETHER IN CONTRACT, STRICT LIABILITY, OR TORT (INCLUDING
+ * NEGLIGENCE OR OTHERWISE) ARISING IN ANY WAY OUT OF THE USE OF THIS
+ * SOFTWARE, EVEN IF ADVISED OF THE POSSIBILITY OF SUCH DAMAGE.
+ */
+#include "stm32f4xx_hal.h"
+#include "stm-init.h"
+#include "stm-sdram.h"
+#include "stm-fmc.h"
+#include "stm-led.h"
+
+SDRAM_HandleTypeDef hsdram1;
+SDRAM_HandleTypeDef hsdram2;
+
+void _sdram_init_gpio(void);
+HAL_StatusTypeDef _sdram_init_fmc(void);
+HAL_StatusTypeDef _sdram_init_params(SDRAM_HandleTypeDef *sdram1, SDRAM_HandleTypeDef *sdram2);
+
+
+HAL_StatusTypeDef sdram_init(void)
+{
+ HAL_StatusTypeDef status;
+ static int initialized = 0;
+
+ if (initialized) {
+ return;
+ }
+ initialized = 1;
+
+ /* We rely on several things being set up by fmc_init() instead of duplicating all
+ * that code here for independent FPGA/SDRAM FMC setup. This means the FPGA<->STM32
+ * FMC bus can be used without the SDRAMs initialized, but the SDRAMs can't be
+ * initialized withouth the FPGA<->STM32 FMC bus being set up too.
+ */
+ fmc_init();
+
+ // configure FMC
+ _sdram_init_gpio();
+ status = _sdram_init_fmc();
+ if (status != HAL_OK) return status;
+
+ // configure SDRAM registers
+ status = _sdram_init_params(&hsdram1, &hsdram2);
+ if (status != HAL_OK) return status;
+
+ return HAL_OK;
+}
+
+void _sdram_init_gpio(void)
+{
+ GPIO_InitTypeDef GPIO_InitStruct;
+
+ /* The bulk of the FMC GPIO pins are set up in fmc_init_gpio().
+ * This function just needs to enable the additional ones used
+ * with the SDRAMs.
+ */
+ fmc_af_gpio(GPIOB, GPIO_PIN_5 | GPIO_PIN_6);
+ fmc_af_gpio(GPIOC, GPIO_PIN_0 | GPIO_PIN_2 | GPIO_PIN_3);
+ fmc_af_gpio(GPIOE, GPIO_PIN_0 | GPIO_PIN_1);
+ fmc_af_gpio(GPIOF, GPIO_PIN_11);
+ fmc_af_gpio(GPIOG, GPIO_PIN_8 | GPIO_PIN_15);
+ fmc_af_gpio(GPIOI, GPIO_PIN_4 | GPIO_PIN_5);
+}
+
+HAL_StatusTypeDef _sdram_init_fmc()
+{
+ HAL_StatusTypeDef status;
+ FMC_SDRAM_TimingTypeDef SdramTiming;
+
+ /*
+ * following settings are for -75E speed grade memory chip
+ * clocked at only 90 MHz instead of the rated 133 MHz
+ *
+ * ExitSelfRefreshDelay: 67 ns @ 90 MHz is 6.03 cycles, so in theory
+ * 6 can be used here, but let's be on the safe side
+ *
+ * WriteRecoveryTime: must be >= tRAS - tRCD (5 - 2 = 3 cycles),
+ * and >= tRC - tRCD - tRP (8 - 2 - 2 = 4 cycles)
+ */
+ SdramTiming.LoadToActiveDelay = 2; // tMRD
+ SdramTiming.ExitSelfRefreshDelay = 7; // (see above)
+ SdramTiming.SelfRefreshTime = 5; // should be >= tRAS (5 cycles)
+ SdramTiming.RowCycleDelay = 8; // tRC
+ SdramTiming.WriteRecoveryTime = 4; // (see above)
+ SdramTiming.RPDelay = 2; // tRP
+ SdramTiming.RCDDelay = 2; // tRCD
+
+ /*
+ * configure the first bank
+ */
+
+ // memory type
+ hsdram1.Instance = FMC_SDRAM_DEVICE;
+
+ // bank
+ hsdram1.Init.SDBank = FMC_SDRAM_BANK1;
+
+ // settings for IS42S32160F
+ hsdram1.Init.ColumnBitsNumber = FMC_SDRAM_COLUMN_BITS_NUM_9;
+ hsdram1.Init.RowBitsNumber = FMC_SDRAM_ROW_BITS_NUM_13;
+ hsdram1.Init.MemoryDataWidth = FMC_SDRAM_MEM_BUS_WIDTH_32;
+ hsdram1.Init.InternalBankNumber = FMC_SDRAM_INTERN_BANKS_NUM_4;
+ hsdram1.Init.CASLatency = FMC_SDRAM_CAS_LATENCY_2;
+
+ // write protection not needed
+ hsdram1.Init.WriteProtection = FMC_SDRAM_WRITE_PROTECTION_DISABLE;
+
+ // memory clock is 90 MHz (HCLK / 2)
+ hsdram1.Init.SDClockPeriod = FMC_SDRAM_CLOCK_PERIOD_2;
+
+ // read burst not needed
+ hsdram1.Init.ReadBurst = FMC_SDRAM_RBURST_DISABLE;
+
+ // additional pipeline stages not neeed
+ hsdram1.Init.ReadPipeDelay = FMC_SDRAM_RPIPE_DELAY_0;
+
+ // call HAL layer
+ status = HAL_SDRAM_Init(&hsdram1, &SdramTiming);
+ if (status != HAL_OK) return status;
+
+ /*
+ * configure the second bank
+ */
+
+ // memory type
+ hsdram2.Instance = FMC_SDRAM_DEVICE;
+
+ // bank number
+ hsdram2.Init.SDBank = FMC_SDRAM_BANK2;
+
+ // settings for IS42S32160F
+ hsdram2.Init.ColumnBitsNumber = FMC_SDRAM_COLUMN_BITS_NUM_9;
+ hsdram2.Init.RowBitsNumber = FMC_SDRAM_ROW_BITS_NUM_13;
+ hsdram2.Init.MemoryDataWidth = FMC_SDRAM_MEM_BUS_WIDTH_32;
+ hsdram2.Init.InternalBankNumber = FMC_SDRAM_INTERN_BANKS_NUM_4;
+ hsdram2.Init.CASLatency = FMC_SDRAM_CAS_LATENCY_2;
+
+ // write protection not needed
+ hsdram2.Init.WriteProtection = FMC_SDRAM_WRITE_PROTECTION_DISABLE;
+
+ // memory clock is 90 MHz (HCLK / 2)
+ hsdram2.Init.SDClockPeriod = FMC_SDRAM_CLOCK_PERIOD_2;
+
+ // read burst not needed
+ hsdram2.Init.ReadBurst = FMC_SDRAM_RBURST_DISABLE;
+
+ // additional pipeline stages not neeed
+ hsdram2.Init.ReadPipeDelay = FMC_SDRAM_RPIPE_DELAY_0;
+
+ // call HAL layer
+ return HAL_SDRAM_Init(&hsdram2, &SdramTiming);
+}
+
+HAL_StatusTypeDef _sdram_init_params(SDRAM_HandleTypeDef *sdram1, SDRAM_HandleTypeDef *sdram2)
+{
+ HAL_StatusTypeDef ok; // status
+ FMC_SDRAM_CommandTypeDef cmd; // command
+
+ /*
+ * enable clocking
+ */
+ cmd.CommandMode = FMC_SDRAM_CMD_CLK_ENABLE;
+ cmd.CommandTarget = FMC_SDRAM_CMD_TARGET_BANK1_2;
+ cmd.AutoRefreshNumber = 1;
+ cmd.ModeRegisterDefinition = 0;
+
+ HAL_Delay(1);
+ ok = HAL_SDRAM_SendCommand(sdram1, &cmd, 1);
+ if (ok != HAL_OK) return ok;
+
+ /*
+ * precharge all banks
+ */
+ cmd.CommandMode = FMC_SDRAM_CMD_PALL;
+ cmd.CommandTarget = FMC_SDRAM_CMD_TARGET_BANK1_2;
+ cmd.AutoRefreshNumber = 1;
+ cmd.ModeRegisterDefinition = 0;
+
+ HAL_Delay(1);
+ ok = HAL_SDRAM_SendCommand(sdram1, &cmd, 1);
+ if (ok != HAL_OK) return ok;
+
+
+ /*
+ * send two auto-refresh commands in a row
+ */
+ cmd.CommandMode = FMC_SDRAM_CMD_AUTOREFRESH_MODE;
+ cmd.CommandTarget = FMC_SDRAM_CMD_TARGET_BANK1_2;
+ cmd.AutoRefreshNumber = 1;
+ cmd.ModeRegisterDefinition = 0;
+
+ ok = HAL_SDRAM_SendCommand(sdram1, &cmd, 1);
+ if (ok != HAL_OK) return ok;
+
+ ok = HAL_SDRAM_SendCommand(sdram1, &cmd, 1);
+ if (ok != HAL_OK) return ok;
+
+
+ /*
+ * load mode register
+ */
+ cmd.CommandMode = FMC_SDRAM_CMD_LOAD_MODE;
+ cmd.CommandTarget = FMC_SDRAM_CMD_TARGET_BANK1_2;
+ cmd.AutoRefreshNumber = 1;
+ cmd.ModeRegisterDefinition =
+ SDRAM_MODEREG_BURST_LENGTH_1 |
+ SDRAM_MODEREG_BURST_TYPE_SEQUENTIAL |
+ SDRAM_MODEREG_CAS_LATENCY_2 |
+ SDRAM_MODEREG_OPERATING_MODE_STANDARD |
+ SDRAM_MODEREG_WRITEBURST_MODE_SINGLE ;
+
+ ok = HAL_SDRAM_SendCommand(sdram1, &cmd, 1);
+ if (ok != HAL_OK) return ok;
+
+
+ /*
+ * set number of consequtive auto-refresh commands
+ * and program refresh rate
+ *
+ * RefreshRate = 64 ms / 8192 cyc = 7.8125 us/cyc
+ *
+ * RefreshCycles = 7.8125 us * 90 MHz = 703
+ *
+ * According to the formula on p.1665 of the reference manual,
+ * we also need to subtract 20 from the value, so the target
+ * refresh rate is 703 - 20 = 683.
+ */
+
+ ok = HAL_SDRAM_SetAutoRefreshNumber(sdram1, 8);
+ if (ok != HAL_OK) return ok;
+
+ HAL_SDRAM_ProgramRefreshRate(sdram1, 683);
+ if (ok != HAL_OK) return ok;
+
+ /*
+ * done
+ */
+ return HAL_OK;
+}